January 2007
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The family of low on-resistance 600 V SuperFETâ„¢ MOSFETs has been designed specifically to address the DPAK (TO-252) device requirements of the latest ultra-slim, low-profile ballast applications. To minimize switching and conduction losses and meet system efficiency needs of the fast-switching lighting designs, the mosfet is said to offer as little as one-third of the on-resistance (0.6 ohms to 1.2 ohms) of traditional planar mosfets. The units are also said to have the ability to withstand both high-speed voltage (dv/dt)- and current (di/dt)-switching transients necessary for ballasts to operate reliably at very high frequencies. Fairchild Semiconductor


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