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Samsung Electronics Co., one of the world's largest manufacturers of computer memory chips, said it has developed the world's first 2-gigabyte, double-data-rate dynamic random access memory (DRAM) chip with an 80-nano design rule.
"The development has proved that semiconductor capacity expansion is also possible through design and process technology, rather than micro-process technology alone," Hwang Chang-gyu, president of Samsung Electronics' semiconductor division, told a group of reporters at a Seoul hotel.
The success in the use of 80-nano technology for new DDR DRAM chip development is a breakthrough in the semiconductor industry, which views technology on a scale of 65 nanometers or less as the core of 2-gigabyte DRAM production.
Samsung Electronics attributed the success to a combination of 3-D transistor technology and state-of-the-art architecture, company officials said. (Yonhap)
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