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May 2007
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The STD11NM60N Mosfet is said to feature an excellent diode dv/dt capability as well as good avalanche performance allowing customers to keep operating temperatures within the typical working range. As a result of the very low conduction losses and reduced power dissipation, the device reportedly helps customers cut heat-sink dimensions, saving significant space board. The small size of the chip, housed in tiny DPAK/IPAK and TO-220FP packages are said to make it particularly suited to lighting applications such as high power factor electronic ballasts and high intensity discharge lamp electronic ballasts. In addition to substantially reducing ON-state losses by minimizing the resistance value, the 600 V device features an energy-optimized driver circuit which is said to enable the Mosfet to drive higher currents at a lower VGS(th) (Voltage Gate Threshold). Keeping the same threshold spread of 2 V the range of VGS used to drive the device has been lowered, is said to optimize the drive and ensure high noise immunity to prevent the circuit from switching on unintentionally. STMicroelectronics, Inc.



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